TIFPA cross-talk #6

Irina Rashevskaya is a technologist at the INFN. Since 1997 her activity took place at the Trieste section of the INFN and at the Trento Institute for Fundamental Physics and Applications as part of various experiments and projects related to the development or use of silicon detectors.
Main research interests: double-sided silicon detectors for different applications, design, manufacturing process, manufacturing yield, electrical characterization, testing, stability testing, quality control, radiation damage.
Current and previous projects: BaBar (Slac), Alice (CERN), SuperB (Rome), Belle II (KEK), Limadou - Test and quality control of Double-sided Silicon Strips Detectors. RedSox, TwinMic, Xafs, Sesame, Hermes, Flares, Theseus, LOFT, eXTP, - Test and electrical characterization of Silicon Drift Detectors.

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Irina Rashevskaya

TIFPA

Electric characterisation and test of double sided silicon strip detector, silicon drift detector and silicon drift detector of large area

video-meeting,
June 3, 2020; 9:30 AM

ABSTRACT

Different types of silicon sensors are used in various physics experiments. The technological aspects of testing of AC coupled double-sided silicon strip detectors (DSSD) will be presented. I will discuss some particular problems for DSSD for Bell2 experiment (KEK, Japan).
The Silicon Drift Detector (SDD) and a system consisting of 8 monolithic arrays of SDD for X-ray absorption spectroscopy at the Jordan synchrotron light source SESAME will be described.
The test of the first batches of large-area (about 95 cm²) Silicon Drift Detectors for eXTP mission (enhanced X-ray Timing and Polarimetry) of the Chinese Academy of Science will be presented.

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